The Etchlab 200 is designed for modularity, process flexibility, and simple use for all processes that are compatible with the wafer direct loading. SENTECH’s Etchlab 200 can accommodate a wide variety of etch processes, e. g. etching of Si, SiO2, metals, and polymers. Available gases is N2, O2, Ar, SF6 and CF4 (CF4/5%O2 mix)
The use of well-tested modules in a single wafer reactor in diode configuration will satisfy all requirements of even demanding etching tasks. According to the specific etching tasks and the required plasma chemistry, different gas systems feed the reactor. All important parameters of the equipment are controlled automatically.
The substrate electrode accepts wafers from 4" to 8" in diameter. It can be configured according to the special requirements of a customer. Wafers of 100 mm to 200 mm in diameter can be directly loaded.
The substrate electrode is water-cooled. It can be tempered between 10 °C and 70 °C using an optional circulation chiller.
RF power @ 13.56 MHz is applied to the substrate electrode and generates the plasma together with a self-bias. The variable plasma impedance is automatically matched to the 50 Ω output impedance of the generator.
The vacuum system with a turbo molecular and a rotary pump is designed for the pressure-flow requirements of the RIE processes and the corrosiveness of halogen chemistry. An automatic throttle valve maintains the selected pressure in the reaction chamber independently from the gas flow. Mass flow controllers (MFC) provide highly constant flow rates. Thus, well-defined and reproducible etching conditions are achieved.